Non-volatile semiconductor memory having a ring-shaped floating

Details Non-volatile semiconductor memory having a ring-shaped floating Non-volatile semiconductor memory having a ring-shaped floating

1995-02-09

1996-04-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257401, H01L 29788, H01L 2976

Patent

active

055106390

ABSTRACT:
A non-volatile semiconductor memory cell having a novel structure is provided. The memory cell has a ring-shaped channel region formed on a semiconductor substrate, a drain region formed in a zone surrounded by the channel region, and a source region formed outside the channel region. The cell further includes a first gate insulation layer formed on the substrate in such a manner as to cover the boundary between the channel region and the drain region, a ring-shaped floating gate electrode formed on the first gate insulation layer, a second gate insulation layer formed on the floating gate electrode; and a control gate electrode which is capacitive-coupled with the floating gate via the second gate insulation layer.

REFERENCES:
patent: 4290077 (1981-09-01), Ronen
patent: 4561168 (1985-12-01), Pitzer et al.
patent: 4845539 (1989-07-01), Inoue
patent: 4990980 (1991-02-01), Wada
patent: 5053842 (1991-10-01), Kojima
EPO Search Report (94101463.1) dated Dec. 15, 1994.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory having a ring-shaped floating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory having a ring-shaped floating , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory having a ring-shaped floating will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2310913