Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-08-08
2009-06-02
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257SE27078, C257SE29300, C257SE29309, C438S201000, C438S211000, C438S257000
Reexamination Certificate
active
07541637
ABSTRACT:
The invention relates to a nonvolatile semiconductor storage element and an associated production and control method, the storage element includes a semiconductor substrate having a source region, a drain region and an intermediate channel region. On a first portion of the channel region, a control layer is formed and insulated from the channel region by a first insulating layer whereas respective charge storage layers are formed in a second portion of the channel region and are insulated from the channel region by a second insulating layer. On the charge storage layer, a programming layer is formed and insulated from the charge storage layer by a third insulating layer and is electrically connected to a respective source region and drain region via a respective interconnect layer.
REFERENCES:
patent: 3731163 (1973-05-01), Shuskus
patent: 5349222 (1994-09-01), Shimoji
patent: 5408115 (1995-04-01), Chang
patent: 5654568 (1997-08-01), Nakao
patent: 5930631 (1999-07-01), Wang et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6178113 (2001-01-01), Gonzalez et al.
patent: 6225554 (2001-05-01), Trehan et al.
patent: 6249022 (2001-06-01), Lin et al.
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6352895 (2002-03-01), Lam
patent: 6366500 (2002-04-01), Ogura et al.
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6617605 (2003-09-01), Winters
patent: 6627500 (2003-09-01), Liu et al.
patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 7456465 (2008-11-01), Prinz et al.
patent: 7473961 (2009-01-01), Kim et al.
patent: 2002/0003255 (2002-01-01), Usuki et al.
patent: 2002/0105023 (2002-08-01), Kuo et al.
patent: 2002/0105037 (2002-08-01), Takahashi
patent: 2003/0142550 (2003-07-01), Kawahara et al.
patent: 2004/0072402 (2004-04-01), Inoue
patent: 2005/0236662 (2005-10-01), Lee
patent: 2006/0202284 (2006-09-01), Yuda
patent: 1 345 273 (2003-09-01), None
patent: 5235369 (1993-09-01), None
patent: 2001230332 (2001-08-01), None
patent: 2002170891 (2002-06-01), None
Japanese Office Action for Patent Application No. 2004-531667, Feb. 20, 2009.
Schuler Franz
Tempel Georg
Brinks Hofer Gilson & Lione
Doan Theresa T
Infineon - Technologies AG
Salerno Sarah K
LandOfFree
Non-volatile semiconductor memory element and corresponding... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile semiconductor memory element and corresponding..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory element and corresponding... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4092620