Non-volatile semiconductor memory devices and methods for...

Details Non-volatile semiconductor memory devices and methods for... Non-volatile semiconductor memory devices and methods for...

2005-01-25

2005-01-25

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S321000, C257S391000

Reexamination Certificate

active

06847088

ABSTRACT:
Examples including non-volatile semiconductor memory devices in which digitized image data and voice data can be more efficiently written and read, and methods for manufacturing the same, are described. In one example, a non-volatile semiconductor memory device300may include a first memory element100and a second memory element200formed in a wafer11and mutually isolated by an element isolation region38, a first impurity diffusion layer16and a second impurity diffusion layer14. The first and second memory elements100and200include gate dielectric layers20and120, floating gates22and122, selective oxide dielectric layers24and124and third impurity diffusion layers15and25, respectively, and also include a common intermediate dielectric layer26and a common control gate28, and connected to the first and second impurity diffusion layers16and14that are commonly shared.

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