Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-03
1999-04-27
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257319, 257320, 257321, 36518526, H01L 29788
Patent
active
058981977
ABSTRACT:
A non-volatile semiconductor memory device accurately stores multivalued data with reduced damage to an insulating layer. The non-volatile semiconductor memory device includes a floating gate electrode configured to be divided into at least two portions. The first portion is employed for accumulating carriers migrating from at least one control gate electrode through a gate insulating layer to the floating gate electrode.
REFERENCES:
patent: 4577215 (1986-03-01), Stewart et al.
patent: 5049956 (1991-09-01), Yoshida et al.
patent: 5111430 (1992-05-01), Morie
patent: 5194924 (1993-03-01), Komori et al.
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5554869 (1996-09-01), Chang
patent: 5757044 (1998-05-01), Kubota
"Flash Memory Engineering Handbook", pp. 106-131 (Aug. 15, 1993).
Kure et al., "Dry Etching of Single Crystal Silicon", pp. 31-37 (1979).
Ahn et al., "Micro Villus Patterning (MVP) Technology for 256Mb DRAM Stack Cell", 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 12-13 (1992).
Terada et al., "COB Structure and HSG Silicon Storage Electrode", Latest Semiconductor Process Technology pp. 71-76 (1992).
U.S. Patent Application Serial No. 08/649,176 filed May 17, 1996 claiming priority from Japanese Patent Application No. 7-120128 dated May 18, 1995 and Japanese Patent Application No. 8-100011 dated Apr. 22, 1996.
Carroll J.
Sanyo Electric Co,. Ltd.
LandOfFree
Non-volatile semiconductor memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile semiconductor memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-686839