Non-volatile semiconductor memory device with over-erasing preve

Details Non-volatile semiconductor memory device with over-erasing preve Non-volatile semiconductor memory device with over-erasing preve

1991-06-28

1994-02-15

Callahan, Timothy P.

Static information storage and retrieval

Read/write circuit

Erase

365185, 365900, G11C 700, G11C 1134

Patent

active

052873170

ABSTRACT:
The present invention is a non-volatile semiconductor memory device comprising a plurality of memory cells arranged in an array of rows and columns and including electrically erasable and programmable non-volatile memory transistors, row selector and column selector for decoding an externally inputted address signals to select memory cells in row and column directions, respectively. A rise detecting circuit detects the rise of a power supply, so that a latch of a latch circuit is released. A determination circuit determines whether or not the data subjected to erasing read from the memory cells is erased, so that if the read data is erased, the latch circuit is latched to set an erase-inhibit mode, thereby preventing over-erasing.

REFERENCES:
patent: 4811294 (1989-03-01), Kobayashi et al.
patent: 4905195 (1990-02-01), Fukuda et al.
patent: 5053990 (1991-10-01), Kreifels
patent: 5122985 (1992-06-01), Santin
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5172338 (1992-12-01), Mehrota
"A 90-ns One-Million Erase/Program Cycle 1-Mbit Flash Memory", Virgil N. Kynett et al., IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1259-1264.
An In-System Reprogrammable 32KX8 CMOS Flash Memory, vol. 23, No. 5, Oct. 1988, Kynett et al.
ISSCC 89/Thursday, Feb. 16, 1989/East Grand Ball Room/12:15 p.m. "Nonvolatile Memories", Kynett et al.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device with over-erasing preve does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device with over-erasing preve, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device with over-erasing preve will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1212725