Non-volatile semiconductor memory device with multi-layer...

Details Non-volatile semiconductor memory device with multi-layer... Non-volatile semiconductor memory device with multi-layer...

2005-02-08

2005-02-08

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S258000

Reexamination Certificate

active

06853029

ABSTRACT:
A semiconductor device includes a semiconductor substrate, source and drain regions, a channel region, a gate insulating film, a charge storage layer, and a control gate electrode. The source and drain regions include first impurities of a first conductivity type. The channel region includes second impurities of a second conductivity type. The gate insulating film includes the second impurities in a region thereof located immediately above at least a portion of the channel region. The charge storage layer is formed on the gate insulating film. The control gate electrode is provided on the charge storage layer. The control gate electrode is formed on the charge storage layer and is electrically connected to the charge storage layer by a connection portion provided on a part of the charge storage layer, which is located immediately above at least a part of the region of the gate insulating film including the second impurities.

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S. Aritome, et al., IEDM, pp. 61-64, “A 0.67um2Self-Aligned Shallow Trench Isolation Cell(SA-STI Cell) for 3V-Only 256Mbit NAND EEPROMs”, 1994.
Y. Takeuchi, et al., Symposium on VLSI Technology Digest of Technical Papers, pp. 102-103, “A Self-Aligned STI Process Integration for Low Cost and Highly Reliable 1Gbit Flash Memories”, 1998.

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