Non-volatile semiconductor memory device with inter-layer insula

Details Non-volatile semiconductor memory device with inter-layer insula Non-volatile semiconductor memory device with inter-layer insula

1997-12-10

2000-10-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257324, 257325, 438257, 438261, 365182, H01L 29788, H01L 29792

Patent

active

061336017

ABSTRACT:
In the semiconductor substrate, an insulation film designed for the element separation is formed. A gate insulation film and a floating gate electrode are formed in the element region surrounded by the insulation film for the element separation. The lower portions of the four lateral surfaces of the floating gate electrode are covered by the interlayer insulation film. The interlayer insulation film is made thicker than the gate insulation film. The upper surface of the floating gate electrode and the upper portions of the four lateral surfaces are covered by the control gate electrode. The upper surface of the control gate electrode is made flat. With this structure, the electrostatic capacitance between the floating gate electrode and the control gate electrode can be increased and stabilized.

REFERENCES:
patent: 5138573 (1992-08-01), Jeuch
patent: 5793078 (1998-08-01), Takeuchi
patent: 5841162 (1998-11-01), Enomoto

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device with inter-layer insula does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device with inter-layer insula, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device with inter-layer insula will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-471742