Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-16
1996-08-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257323, 257435, 257294, H01L 29788
Patent
active
055459064
ABSTRACT:
A non-volatile semiconductor device comprises a memory cell having a P-type silicon substrate, an N-type diffusion region formed in the substrate and serving as a word line, N-type diffusion region one serving as a source and the other as a drain of the cell transistor, a floating gate extending from a region above the diffusion region over a region above between diffusion regions, and a bit line connected to the diffusion regions. Such a memory cell is characterized in that a passivation film is formed on an interlayer insulation film insulating the floating gate and the bit lines from each other, and that a contaminant shut-off layer is provided between the passivation film and the floating gate. With this structure, the route carrying contaminants into the cell can be shut off even during manufacture thereof, achieving a high reliability of the product.
REFERENCES:
patent: 4601097 (1986-07-01), Shimbo
patent: 4609930 (1986-09-01), Yamazaki
patent: 4942450 (1990-07-01), Iwashita
patent: 5172200 (1992-12-01), Muragishi
Kanzaki Koichi
Ogura Hidemitsu
Jackson Jerome
Kabushiki Kaisha Toshiba
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