Non-volatile semiconductor memory device having thin film memory

Details Non-volatile semiconductor memory device having thin film memory Non-volatile semiconductor memory device having thin film memory

1992-11-19

1994-06-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257314, 257 67, 257 71, 257 57, 365185, H01L 2978, H01L 2904

Patent

active

053212860

ABSTRACT:
A electrically erasable and programmable read only memory device has a memory cell array implemented by a plurality of floating gate type memory transistors, and each of the floating gate type memory transistors is implemented by a thin film field effect transistor with a floating gate electrode formed on a relatively thick insulating film covering a major surface of a semiconductor substrate so that the biasing conditions and crystal defects do not have any influence on the floating gate type memory transistor.

REFERENCES:
patent: 4630089 (1986-12-01), Sasaki et al.
patent: 5038193 (1991-08-01), Kamigaki et al.
patent: 5191551 (1993-03-01), Inoue
patent: 5229644 (1993-07-01), Wakai et al.
Tech. Notes RCA Bulletin No. 1152 May 24, 1976, "Floating . . . Device" Medwin et al.
Mayer, IEEE Trans. on Elec. Dev. vol. 37, No. 5, May 1990, "Modes . . . Trans." pp. 1280-1288.
"A 3.6 square-micron Memory Cell Structure for 16 MB EPROMS" by IEDM 89-583 (pp. 25.2.1-25.2-3).

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