Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-27
1997-01-07
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257324, H01L 2968
Patent
active
055920020
ABSTRACT:
In a non-volatile semiconductor memory device, an n-type impurity diffusion layer constituting source and drain regions is formed on the surface area of a p-type silicon substrate, and then a first oxide film is formed on the n-type impurity diffusion layer. A floating gate is formed on the silicon substrate so as to be partially overlapped with the drain region through a second oxide film, and a control gate is formed thereon through a third oxide film and an insulating film. The thickness of the third oxide film is set to a value larger than the total thickness of the second oxide film and the insulating film to prevent occurrence of F-N tunnel action in a split gate region.
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Gheorghe Samachisa et al, "A 128K Flash EEPROM Using Double-Polysilicon Technology", IEEE J. Solid-State Circuits, vol. SC-22, No. 5, pp. 176-182. No date.
Crane Sara W.
Hardy David B.
NEC Corporation
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