Non-volatile semiconductor memory device having nano-dots on...

Details Non-volatile semiconductor memory device having nano-dots on... Non-volatile semiconductor memory device having nano-dots on...

2007-10-09

2007-10-09

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C977S774000, C438S264000

Reexamination Certificate

active

11354092

ABSTRACT:
There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2or CeO2on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

REFERENCES:
patent: 2004/0245579 (2004-12-01), Ohmi et al.
patent: 2007/0014151 (2007-01-01), Zhang et al.
S. Tiwari et al. IEEE International Electron Devices Meeting pp. 521-524 (1995).
R.W.G. Wyckoff, Crystal Structure Second Edition, vol. 1, John Wiley & Sons, Inc. (1963).

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