Non-volatile semiconductor memory device having an area responsi

Details Non-volatile semiconductor memory device having an area responsi Non-volatile semiconductor memory device having an area responsi

1991-10-08

1994-01-11

Bowler, Alyssa H.

Static information storage and retrieval

Floating gate

Particular biasing

365195, 365228, 36523003, G11C 700, G11C 800, G11C 1134

Patent

active

052787869

ABSTRACT:
A non-volatile semiconductor memory device comprises an area in which only one rewriting is possible and an area in which rewriting is possible repeatedly. A control circuit generates a high voltage from a boosting circuit and operates a writing circuit to write data in the rewritable area whose address designated by an address register/decoder. The control circuit allows writing of data into the area in which only one rewriting is possible by the writing circuit in response to an external signal. Therefore, even if the writing mode is set influenced by the unstable state of the power supply, destruction of the data in the area in which only one rewriting is possible can be prevented.

REFERENCES:
patent: 4521853 (1985-06-01), Guttag
patent: 4796235 (1989-01-01), Sparks et al.
patent: 4805109 (1989-02-01), Kroll et al.
patent: 4811293 (1989-03-01), Knothe et al.
patent: 4853896 (1989-08-01), Yamaguchi
patent: 4975878 (1990-12-01), Boddu et al.

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