Non-volatile semiconductor memory device having a floating gate

Details Non-volatile semiconductor memory device having a floating gate Non-volatile semiconductor memory device having a floating gate

1997-09-23

2000-05-09

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257240, 257239, 257244, 257284, 257330, 257315, 257332, H01L 2976

Patent

active

060607394

ABSTRACT:
A semiconductor well region has a groove into which a block-shaped floating gate is formed. The block-shaped floating gate has a bottom surface facing a bottom surface of the semiconductor well region served as a first channel region, a first side surface facing one of side surfaces of the semiconductor well region served as a second channel region, a second side surface facing the other of side surfaces of the semiconductor well region served as a third channel region, thereby a channel width is trebled.

REFERENCES:
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5508545 (1996-04-01), Uchiyama
patent: 5574302 (1996-11-01), Wen et al.

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