Non-volatile semiconductor memory device equipped with sense amp

Details Non-volatile semiconductor memory device equipped with sense amp Non-volatile semiconductor memory device equipped with sense amp

1992-06-01

1993-10-19

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Differential sensing

36518909, 365206, 365196, G05F 324, G11C 702

Patent

active

052552330

ABSTRACT:
An electrically programmable read only memory device changes the threshold voltage level of each memory cell depending upon logic level of a data bit for producing a read-out voltage level indicative of the data bit, and a sense amplifier unit changes the read-out voltage level and a reference voltage level into first and second current by means of first and second current mirror circuits so that a third current mirror circuit controls a voltage level converted from the first current on the basis of a voltage level converted from the second current, wherein the sense amplifier unit further comprises a differential amplifier circuit responsive to the voltage levels respectively converted from the first and second currents so as to discriminate small difference in threshold level of each memory cell, thereby allowing a programming to be completed within relatively short time period.

REFERENCES:
patent: 4907201 (1990-03-01), Minami et al.
patent: 5029138 (1991-07-01), Iwashita
patent: 5109187 (1992-04-01), Guliani

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