Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2005-11-30
2008-07-01
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S185170, C365S185260, C365S185330, C365S189040
Reexamination Certificate
active
07394704
ABSTRACT:
A non-volatile semiconductor memory device comprising a plurality of non-volatile semiconductor memory cells, an interface making data exchange with an external device to write/read data with respect to the non-volatile semiconductor memory cells, and a control circuit for controlling the non-volatile semiconductor memory cells, wherein the interface and the control circuit include a first read mode initialized via a first bootstrap to read data from the non-volatile semiconductor memory cells for continuously outputting (N+M)-byte (N is the n-th power of 2, n is positive integers) data via the interface, and a second read mode initialized via a second bootstrap to read data from the non-volatile semiconductor memory cells for continuously outputting K-byte (K is the k-th power of 2, k is positive integers) data via the interface.
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Dohmae Hiroyuki
Inoue Atsushi
Quader Khandker N.
Sato Takeaki
Tanaka Tomoharu
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sandisk Corporation
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