Non-volatile semiconductor memory device and process of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S396000

Reexamination Certificate

active

07151295

ABSTRACT:
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

REFERENCES:
patent: 6417073 (2002-07-01), Watanabe
patent: 6479369 (2002-11-01), Miyoshi
patent: 6720610 (2004-04-01), Iguchi et al.
patent: 6768161 (2004-07-01), Kinoshita
patent: 6794708 (2004-09-01), Mori
patent: 6906378 (2005-06-01), Sumino et al.
patent: 03-220778 (1991-09-01), None
patent: 10-335333 (1998-12-01), None
patent: 11-026728 (1999-01-01), None
patent: 2002-359308 (2002-12-01), None

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