Non-volatile semiconductor memory device and process for...

Details Non-volatile semiconductor memory device and process for... Non-volatile semiconductor memory device and process for...

2005-04-26

2005-04-26

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S259000, C438S954000

Reexamination Certificate

active

06885060

ABSTRACT:
A non-volatile semiconductor memory device comprising a first conductive semiconductor having steps on a surface thereof, a second conductive semiconductor region formed on an upper portion and a bottom portion of each of the steps and being separated in a direction perpendicular to the main surface of the first conductive semiconductor to function as a source or a drain, a gate dielectric film containing therein charge storage means which is spatially discrete and being formed on the first conductive semiconductor so as to coat at least a sidewall of each of the steps, and a gate electrode formed on the gate dielectric film. Accordingly, there are provided a non-volatile semiconductor memory device which suffers almost no deterioration in the properties and can perform the operation of recording of 2 bits per unit memory device even when the size of the semiconductor memory device in the semiconductor substrate is scaled down, and a process for fabricating the non-volatile semiconductor memory device.

REFERENCES:
patent: 6163049 (2000-12-01), Bui
patent: 6596590 (2003-07-01), Miura et al.
Eitan et al., “Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challange to Floating Gate Cells?” Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, pp. 522-524.
Khare et al., “Highly Robust Ultra-Thin Gate Dielectric for Giga Scale Technology,” 1998 Symposium on VLSI Technology Digest of Technical Papers, pp. 218-219.
Song et al., “Ultra Thin(<20 Å) CVD Si3N4Gate Dielectric for Deep-Sub- Micron CMOS Devices,” IEEE, 1998, pp. 14.1.1-14.1.4.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device and process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device and process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device and process for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3433498