Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-10
2011-11-08
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257SE29309, C257SE21423, C438S287000
Reexamination Certificate
active
08053826
ABSTRACT:
The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
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Ho Tu-Tu
Miles & Stockbridge P.C.
Renesas Electronics Corporation
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