Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-13
2006-06-13
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S321000, C257S324000
Reexamination Certificate
active
07061043
ABSTRACT:
A non-volatile semiconductor memory device with a small layout area, having a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, wherein: each of the memory cells has a source region, a drain region, a channel region disposed between the source region and the drain region, a select gate and a word gate disposed to face the channel region, and a non-volatile memory element provided between the word gate and the channel region; and a longitudinal section of the word gate has a base, a side which is perpendicular to the base, and a curved side which connects the base to the side.
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Ngo Ngan V.
Seiko Epson Corporation
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