Non-volatile semiconductor memory device and method of...

Details Non-volatile semiconductor memory device and method of... Non-volatile semiconductor memory device and method of...

2005-05-24

2005-05-24

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S325000, C257S326000, C438S201000, C438S216000, C438S241000, C438S257000, C438S261000

Reexamination Certificate

active

06897524

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell array formed on the semiconductor substrate, and including a first gate insulator having a first thickness. The device further includes a high-voltage transistor circuit formed on the semiconductor substrate, and including a second gate insulator having a second thickness greater than the first thickness, and a peripheral circuit formed on the semiconductor substrate, and including the second gate insulator.

REFERENCES:
patent: 5600164 (1997-02-01), Ajika et al.
patent: 6165849 (2000-12-01), An et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6624468 (2003-09-01), Takebuchi

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