Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-24
2011-05-24
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21686, C438S266000
Reexamination Certificate
active
07948026
ABSTRACT:
A method of manufacturing a non-volatile semiconductor memory device including previously forming a recess in a first peripheral region on a semiconductor substrate, forming a first gate insulator having a first thickness in the recess, forming a second gate insulator having a second thickness less than the first thickness in an array region and a second peripheral region on the semiconductor substrate, successively depositing first and second gate electrode films and first and second mask insulators on each of the first and second gate insulators, forming an isolation trench on a surface of the semiconductor substrate to correspond to each position between the array region and the first and second regions of the peripheral region, depositing a buried insulator on the entire surface, and polishing an upper surface of the buried insulator so that the upper surface can be planarized.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Vu David
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