Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-21
2007-08-21
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S060000, C257S296000, C257S031000, C257S325000, C438S216000, C438S261000, C438S264000, C438S287000, C438S288000
Reexamination Certificate
active
11131865
ABSTRACT:
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS1made of silicon nitride or silicon oxynitride and a second nitride film CS2made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS1. The first nitride film CS1is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS2is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.
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“Charge Injection and Retention Characteristic of MNOS Structure With Double SiN Layer”, Taehong Kim and Kazunori Ohnishi, Denshi Joho Tsushin Gakkai Ronbunshi, C-11, vol. J74-C-II, No. 8, pp. 662-664.
Aozasa Hiroshi
Fujiwara Ichiro
Nomoto Kazumasa
Tanaka Shinji
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Wojciechowicz Edward
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