Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S318000, C257S322000
Reexamination Certificate
active
07053440
ABSTRACT:
A non-volatile semiconductor memory device comprising: a first conductive type well formed within a semiconductor substrate; and a memory cell having a gate insulating film, a floating gate, an insulating film, a control gate and a pair of source/drain region, the gate insulating film, the floating gate, the insulating film, the control gate being layered in this order above the first conductive type well, the pair of source/drain regions being made up of second conductive type diffusion layers and formed within the first conductive type well, wherein the source region is electrically connected to the first conductive type well.
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Hakozaki Kenji
Tanaka Ken'ichi
Ho Tu-Tu
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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