Non-volatile semiconductor memory device and its testing method

Details Non-volatile semiconductor memory device and its testing method Non-volatile semiconductor memory device and its testing method

1999-03-25

2000-02-29

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 365195, 365201, G11C 1122

Patent

active

060317558

ABSTRACT:
A non-volatile semiconductor memory includes a ferroelectric memory cell 3 and a voltage detection circuit 2. The voltage detecting circuit 2 monitors the drop of a power supply voltage and cuts off the power supply voltage when it is lower than a prescribed voltage so that the memory cell 3 is not operated. In addition, in response to a control input signal, a control circuit 1 is provided to control the power supply voltage so that it is not cut off even when it is lower than the prescribed voltage. In this configuration, the non-volatile semiconductor memory device can be sufficiently subjected to the screening test for a short time without suffering from stress for a long time.

REFERENCES:
patent: 5703804 (1997-12-01), Takata et al.
patent: 5828596 (1998-10-01), Takata et al.

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