Non-volatile semiconductor memory device and electric device...

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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Reexamination Certificate

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10950416

ABSTRACT:
A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells arranged therein, the cell array being divided into a plurality of blocks, each the block being divided into a plurality of sub-blocks each having one or plural and continuous pages; and a controller for controlling data erasure of the cell array in a way that each the sub-block serves as a unit of data erasure, wherein each the sub-block in the cell array stores the number of data erasure which is renewed by each data erasure, and the number of data erasure is limited for each the sub-block to a permissible maximum value stored in a certain block in the cell array.

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U.S. Appl. No. 11/610,193, filed Dec. 13, 2006, Fukuka et al.

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