Non-volatile semiconductor memory device and electric device...

Electrical computers and digital processing systems: memory – Storage accessing and control

Reexamination Certificate

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C711S103000, C711S154000, C365S200000, C365S202000

Reexamination Certificate

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10865936

ABSTRACT:
A non-volatile semiconductor memory device including: a plurality of cell arrays each having electrically rewritable and non-volatile memory cells arranged therein; a plurality of page buffers disposed in correspondence with the cell arrays respectively for reading and writing data by a page of the respective cell arrays; and a data bus shared by the cell arrays for data transferring between the page buffers and external terminals, wherein the non-volatile semiconductor memory device has a page copy mode defined as follows: read out data of a copy source page within a first cell array to a first page buffer; transfer the read out data to a second page buffer via the data bus; and then write the read out data into a copy destination page of a second cell array.

REFERENCES:
patent: 6661706 (2003-12-01), Kawai et al.
patent: 2003/0169630 (2003-09-01), Hosono et al.
patent: 2004/0202034 (2004-10-01), Lee

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