Non-volatile semiconductor memory device and electric device...

Details Non-volatile semiconductor memory device and electric device... Non-volatile semiconductor memory device and electric device...

2006-05-23

2006-05-23

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S205000, C365S208000, C365S189011

Reexamination Certificate

active

07050346

ABSTRACT:
A non-volatile semiconductor memory device includes a cell array in which electrically rewritable and non-volatile memory cells are arranged, and a sense amplifier circuit configured to read and write data in association with the cell array, wherein the sense amplifier circuit includes: differential amplifier having first and second input nodes and configured to amplify a difference voltage between the first and second input nodes; a data transfer circuit configured to selectively connect the first input node to a bit line in the cell array; a reference voltage setting circuit configured to apply a reference voltage to the second input node of the differential amplifier; and a data storing circuit configured to temporarily hold a loaded write data at the first input node of the differential amplifier, and control the reference voltage at the second input node of the differential amplifier in correspondence with the write data held therein.

REFERENCES:
patent: 6031760 (2000-02-01), Sakui et al.
patent: 6163484 (2000-12-01), Uekubo
patent: 6212109 (2001-04-01), Proebsting
patent: 6504778 (2003-01-01), Uekubo
patent: 6771551 (2004-08-01), Terzioglu et al.
patent: 11-260076 (1999-09-01), None

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