Non-volatile semiconductor memory device allowing concurrent...

Details Non-volatile semiconductor memory device allowing concurrent... Non-volatile semiconductor memory device allowing concurrent...

2007-10-23

2007-10-23

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189040

Reexamination Certificate

active

11179892

ABSTRACT:
A write bit line and a read bit line are provided separately for a memory cell. A source line connecting to the memory cell is formed of a source impurity region the same in conductivity type as a substrate region. A memory cell transistor and the source impurity region are connected by a metal interconnection line of a low resistance. A rise in the source line potential can be prevented, and a memory cell current can reliably be generated according to storage data. Further, fast data reading can be achieved. Additionally, by performing precharging and data amplification in a unit of read bit line, the load of the read bit line can be alleviated to achieve fast reading. An accessing time of a non-volatile semiconductor memory device that uses a variable resistance element as a storage element is reduced without increasing the current consumption.

REFERENCES:
patent: 6549455 (2003-04-01), Yamada
patent: 6693824 (2004-02-01), Nahas et al.
patent: 6879513 (2005-04-01), Ooishi
patent: 7057919 (2006-06-01), Jenne et al.
patent: 7068530 (2006-06-01), Hayashi
patent: 7095648 (2006-08-01), Ditewig et al.
patent: 2003-249629 (2003-09-01), None
patent: 2004-348836 (2004-12-01), None
patent: 2004-348891 (2004-12-01), None
patent: 2005-025893 (2005-01-01), None
Durlam et al., “A 0.18 μm 4Mb Toggling MRAM”, 2003 IEEE International Electron Devices Meeting, Published in IEDM Technical Digest 2003, Session 34, paper #0, Dec. 2003, pp. 1-3.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device allowing concurrent... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device allowing concurrent..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device allowing concurrent... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3843612