Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1999-03-18
2000-04-04
Mai, Son
Static information storage and retrieval
Systems using particular element
Ferroelectric
365205, 365210, G11C 1122, G11C 700
Patent
active
060469285
ABSTRACT:
A non-volatile semiconductor memory device according to the present invention includes: a memory cell including a capacitor having a ferroelectric film interposed between and a first electrode and a second electrode, the capacitor being capable of retaining binary information responsive to the ferroelectric film taking one of first and second polarization states, and a transistor having a source, a drain, and a gate, the source being coupled to the first electrode of the capacitor; a word line coupled to the gate of the transistor; a bit line coupled to the drain of the transistor; a plate line coupled to the second electrode of the capacitor; and a sense amplifier coupled to the bit line. When performing a read operation for the memory cell, a voltage on the bit line is amplified to a supply voltage by the sense amplifier if the ferroelectric film is in the first polarization state; and the voltage on the bit line is amplified to a negative voltage by the sense amplifier if the ferroelectric film is in the second polarization state.
REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5539279 (1996-07-01), Takeuchi et al.
patent: 5600587 (1997-02-01), Koike
patent: 5926413 (1999-07-01), Yamada et al.
Mai Son
Sharp Kabushiki Kaisha
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