Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1993-12-21

1995-08-29

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

054466881

ABSTRACT:
A non-volatile semiconductor memory device, includes: a memory cell including an MOS transistor for reading, an MOS transistor for writing, and an MFS transistor provided with a gate having a ferroelectric film above a channel region, one of a drain and a source of the MFS transistor having a common electric potential; a bit line for writing, to which the gate of the MFS transistor is connected through the MOS transistor for writing, and to which multivalued data having at least three voltage levels or analog data is input; a bit line for reading, to which the other of the drain and the source of the MFS transistor is connected through the MOS transistor for reading, and from which multivalued data having at least three voltage levels or analog data is read; a word line for writing connected to a gate of the MOS transistor for writing; and a word line for reading connected to a gate of the MOS transistor for reading.

REFERENCES:
patent: 4709350 (1987-11-01), Nakagome et al.
patent: 4935896 (1990-06-01), Matsumura et al.
Eaton, S. S., et al., "A ferroelectric nonvolatile memory" 1988 IEEE International Solid-State Circuits Conference (Feb. 18, 1988) pp. 130-131 and 329.
Okuyama, M., "Ferroelectric gate nonvolatile memory FET--MFS-FET" Ferroelectric thin film integration technology (Feb. 1992) pp. 261-268. A partial English translation is also enclosed.

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