Non-volatile semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including signal clamping

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36523006, 36518524, G11C 1134

Patent

active

054635837

ABSTRACT:
A non-volatile semiconductor memory device including a memory cell transistor connected to a bit line and having a floating gate and a control gate connected to a word line, a power source line for supplying a power source voltage, and selection unit for applying a word line selection voltage to the word line, wherein the word line selection voltage of the selection unit is lower than the power source voltage of the power source line.

REFERENCES:
patent: 4527256 (1985-07-01), Gibbel
IEEE International Solid State Circuits Conference, vol. 1989, No. 32, Feb. 1989, New York, U.S., pp. 132-133, "A 5V-Only 256k Bit CMOS Flash EEPROM", by S. D'Arrigo et al.

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