Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1996-09-24

1998-11-10

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438217, H01L 2976, H01L 29788

Patent

active

058348085

ABSTRACT:
The object of the present invention is to provide a non-volatile semiconductor memory device which is capable of increasing a integration density of a memory cell by increasing the number of states to be expressed with one memory cell.
A non-volatile semiconductor memory device of the present invention has a structure in which two floating gates (3, 4) under one control gate (5) having a minimum dimension are provided, each of two floating gates is able to express two values in accordance with existences of stored charges whereby one memory cell is able to express four values.

REFERENCES:
patent: 4888734 (1989-12-01), Lee et al.
patent: 4893273 (1990-01-01), Usami
patent: 5070378 (1991-12-01), Yamagata
patent: 5364806 (1994-11-01), Ma et al.
M. Bauer et al., "A Multilevel-Cell 32Mb Flash Memory", 1995 IEEE International Solid-State Circuits Conference, 1995, pp. 132-133.

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