Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1994-06-28

1996-09-10

Nelms, David C.

Static information storage and retrieval

Read/write circuit

365218, 365184, G11C 1602

Patent

active

055552048

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell including source and drain regions formed in a surface region of the semiconductor substrate, and a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate sequentially stacked on the semiconductor substrate, the memory cell being capable of electrically rewriting data by exchanging charges between the charge storage layer and the semiconductor substrate, and a means for applying a high potential to the semiconductor substrate and an intermediate potential to the control gate in a first data erase operation, and applying a high potential to the semiconductor substrate and a low potential to the control gate in second and subsequent data erase operations, thereby removing electrons from the charge storage layer.

REFERENCES:
patent: 5299162 (1994-03-01), Kim et al.
patent: 5315547 (1994-05-01), Shoji et al.
patent: 5325327 (1994-06-01), Ema
patent: 5357462 (1994-10-01), Tanaka et al.

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