Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1995-09-05

1997-06-10

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 36518505, H01L 29792, H01L 29788

Patent

active

056378955

ABSTRACT:
In a non-volatile semiconductor memory device having a memory cell array formed by arranging a plurality of non-volatile reloadable semiconductor memory cells (Mi) and select gate elements on a semiconductor substrate (11) via a gate insulating film (13), each memory cell being formed by interposing an interlayer insulating film (15) between a charge storage layer and a control gate line (16.sub.i), the memory device comprises a plurality of select gate lines (14.sub.i) formed by a wiring layer the same as the charge storage layer of the memory cells, as gate electrodes of the select gate elements; and select gate over-adjacent connect lines (16.sub.9, 16.sub.10) formed by a wiring layer the same as the control gate lines (16.sub.i) of the memory cells and located over the select gate lines (14.sub.9, 14.sub.10) via an insulating film in such a way as to be kept floated without contacting with any other wires and potential nodes.

REFERENCES:
patent: 5290723 (1994-03-01), Tami et al.
patent: 5293337 (1994-03-01), Artome et al.
patent: 5471423 (1995-11-01), Iwasa
patent: 5497018 (1996-03-01), Kajita

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-767018