Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-05-30

2010-06-08

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185010

Reexamination Certificate

active

07733728

ABSTRACT:
Disclosed is to enable high speed reading from a storage node when a read is executed. A main cell array is constituted from main cell division units20a. Each main cell division unit20aincludes select gates SG that extend in a vertical direction, common sources CS that extend in a horizontal direction below the select gates SG outside a cell region, word lines W0to W15that extend above the select gates SG in the horizontal direction within the cell region, a plurality of storage nodes disposed in the vicinity of intersecting portions between the word lines W0to W15and the select gates SG, respectively, below the word lines W0to W15, and a bit line MGB for transmitting to a sense amplifier11information on one of the storage nodes through a selection switch21. In the main cell division unit20a, an inversion layer is formed below each of the select gates SG within the cell region by applying a positive voltage to each of the select gates SG. A reference cell array is constituted from a reference cell division unit30ahaving a same configuration as the main cell division unit20a.

REFERENCES:
patent: 3604988 (1971-09-01), Kahng et al.
patent: 4366559 (1982-12-01), Misaizu et al.
patent: 5105385 (1992-04-01), Ohtsuka et al.
patent: 6385097 (2002-05-01), Liao et al.
patent: 2001/0006479 (2001-07-01), Ikehashi et al.
patent: 2002/0172068 (2002-11-01), Hidaka
patent: 2003/0232284 (2003-12-01), Liu et al.
patent: 2004/0008543 (2004-01-01), Kato
patent: 2002-8386 (2002-01-01), None

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