Non-volatile semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S226000

Reexamination Certificate

active

07466610

ABSTRACT:
A non-volatile semiconductor memory device comprises a redundant memory cell to store address data of a defect cell in a memory cell array. A first decoder circuit is given a first drive voltage to provide a control signal to the redundant memory cell. A dummy memory cell has a threshold voltage corresponding to the redundant memory cell. A second decoder circuit is given a second drive voltage corresponding to the first drive voltage to provide a control signal to the dummy memory cell. A comparator circuit compares data to be read out of the dummy memory cell with data actually read out of the dummy memory cell.

REFERENCES:
patent: 6219285 (2001-04-01), Murakuki et al.
patent: 6856543 (2005-02-01), Atsumi et al.
patent: 2006/0233014 (2006-10-01), Oh
patent: 2007/0038805 (2007-02-01), Eliason et al.
patent: 10-302476 (1998-11-01), None

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