Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-06-16

2008-11-18

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257SE29129, C257SE29030, C257SE21422, C257SE21068

Reexamination Certificate

active

07453117

ABSTRACT:
To achieve a high-speed and reliable read operation. A unit cell is constituted by a select gate3provided in a first region and on a substrate1with an insulating film2interposed inbetween, a floating gate6aprovided in a second region adjacent to the first region with an insulating film5interposed inbetween, a diffusion region7aprovided in a third region adjacent to the second region and on the surface of the substrate, and a control gate11provided on the top of the floating gate6awith an insulating film8interposed inbetween. Each data bit is stored using corresponding first unit cell and second unit cell.

REFERENCES:
patent: 3979680 (1976-09-01), Sakamoto
patent: 6515907 (2003-02-01), Miyagi
patent: 6894339 (2005-05-01), Fan et al.
patent: 2005/0023591 (2005-02-01), Ding
patent: 2005/0062091 (2005-03-01), Ding
patent: 1371129 (2002-09-01), None
patent: 1577801 (2005-02-01), None
patent: 2002-237191 (2002-08-01), None
Chinese Office Action dated Mar. 7, 2008, with English translation.

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