Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2005-06-14

2005-06-14

Anderson, Matthew D. (Department: 2186)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C365S185220, C365S185240, C365S185300, C365S185330

Reexamination Certificate

active

06907497

ABSTRACT:
A non-volatile semiconductor memory device includes a memory cell array, a data hold circuit, and a controller A program control function applies a program voltage to a selected memory cell to let data shift from a first logic state to a second logic state. A program verify control function verifies that a programmed data of the selected memory cell shifted to the second logic state. An erratic program verify control function checks that a threshold voltage of a memory cell to be held in the first logic state does not exceed a third value set as an upper limit value of a variation of the first logic state. An over-program verify control function checks that a threshold voltage of the selected memory cell shifted to the second logic state does not exceed a fourth value set as an upper limit thereof.

REFERENCES:
patent: 5742541 (1998-04-01), Tanigami et al.
patent: 5936890 (1999-08-01), Yeom
patent: 10-027487 (1998-01-01), None
patent: 11-260076 (1999-09-01), None
patent: 2000-100178 (2000-04-01), None
A sampling weak-program method to tighten Vth-distribution of 0.5 V for low-voltage flash memories. Shiga, H. et al.. VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on , Jun. 17-19, 1999 pp.:33-36.
U.S. Appl. No. 09/800,913, filed Mar. 8, 2001, Hosono et al.

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