Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1990-11-02

1992-05-26

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365185, 36518907, 365203, 365226, G11C 700

Patent

active

051173921

ABSTRACT:
In a non-volatile memory device comprising a memory matrix having semiconductor memory cells arranged in rows and columns, a plurality of word lines are connected to the control gates of the semiconductor memory cells arranged in the rows and selected by a row decoder, a plurality of bit lines are connected to the sources of the semiconductor memory cells arranged in the columns and selected by a column decoder. Data lines are connected to the drains of a plurality of the semiconductor memory cells. A constant voltage application/current detect circuit applies a constant voltage to the drains of the semiconductor memory cells through the data line, and etects the current required to maintain the data line at the constant voltage.

REFERENCES:
patent: 5031148 (1991-07-01), Kitazawa et al.

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