Non-volatile semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including signal comparison

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Details

36518522, 36518529, G11C 700, G11C 1134

Patent

active

055575722

ABSTRACT:
An electrically alterable non-volatile semiconductor memory device includes a plurality of electrically alterable memory cells arranged in columns and rows, a decoder circuit which selects at least one of the plurality of memory cells and does not select others, a writing circuit for writing a selected data in the selected memory cell through the decoder circuit, a reading circuit for reading a data stored in the selected memory cell through the decoder circuit, a comparing circuit for holding the data stored in the selected memory cell and data to be written in the memory cell and comparing both the data with each other, a judging circuit for judging whether the stored data in the selected memory cell is required to be altered or not on the basis of the comparison result of the comparing circuit, and an alteration control circuit for performing altering of the data of the memory cell when stored data is required to be altered on the basis of the judgment result of the judging circuit.

REFERENCES:
patent: 4698787 (1987-10-01), Mukberjee et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5084843 (1992-01-01), Mitsuishi et al.
Article "Flash Memory Technology and Its Future" by Yasushi Terada, ICD91, 1991.

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