Non-volatile semiconductor memory circuits

Static information storage and retrieval – Systems using particular element – Semiconductive

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365154, G11C 1140

Patent

active

044751770

ABSTRACT:
A non-volatile semiconductor memory circuit having at least one variable threshold FATMOS transistor in the cross-coupled lateral branches and a plurality of input switching transistors controlling operation of the circuit. Capacitive imbalance between the nodes of the circuit is reduced by having each transistor which is connected between a node and an input switching transistor driven by the same control signal as a corresponding transistor connected between the other node and an input switching transistor. This reduces the occurrence of wrong-state switching in the circuit during reading.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4333166 (1982-06-01), Edwards

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