Non-volatile semiconductor memory cell and method for production

Details Non-volatile semiconductor memory cell and method for production Non-volatile semiconductor memory cell and method for production

1997-05-16

1998-07-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257325, 438 3, 365145, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057808864

ABSTRACT:
A non-volatile semiconductor memory cell employing a field effect transistor having a gate of the metal/ferroelectric structure or the metal/ferroelectric/metal/insulator insulator structure, wherein the ferroelectric layer is a layer of bismuth titanate containing bismuth more than the stoichiometric quantity or a piled layer of bismuth titanate of the stoichiometric composition and bismuth titanate containing bismuth more than the stoichiometric quantity, both of which have a less amount of dielectric constant and remanent polarization, thereby enabling the non-volatile memory cell to memorize and erase binary information with a less amount of voltage to be applied to the gate.

REFERENCES:
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5478653 (1995-12-01), Guenzer
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5576564 (1996-11-01), Satoh et al.
"A Single-Transistor Ferroelectric Memory Cell", Takashi Nakamura et al., ISSCC95, pp. 68-70, Feb. 15, 1995.
P.C. Joshi et al., "Rapid Thermally Processed Ferroelectric BI4TI3012 Thin Films," Journal of Applied Physics, vol. 72, No. 11, 1 Dec. 1992, pp. 5517-5519.
Patent Abstracts of Japan, vol. 095, No. 007, 31 Aug. 1995 & JP 07 099257 A (Ricoh Co Ltd), 11 Apr. 1995.
B.J. Liddiard, "Ferroelectric Memories: An Emerging Techjnology," Wescon Technical Papers, vol. 35, 1 Nov. 1991, pp. 390-393.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory cell and method for production does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory cell and method for production, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory cell and method for production will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1884656