Non-volatile semiconductor memory capable of readily erasing dat

Details Non-volatile semiconductor memory capable of readily erasing dat Non-volatile semiconductor memory capable of readily erasing dat

1988-06-28

1990-04-24

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Superconductive

365218, 365185, 357 235, 357 5, 505 1, G11C 700, G11C 1140, G11C 1144

Patent

active

049205129

ABSTRACT:
An EPROM in which data can be easily erased comprises a P type semiconductor substrate; source.drain regions formed on a main surface of the P type semiconductor substrate, a floating gate for storing charges representing information formed on a region sandwiched by the source.drain regions with an insulating film interposed therebetween, a superconductive material which will be the switching device formed on the floating gate, and a control gate formed on the superconductive material. In the normal operation, the superconductive material is non-conductive, so that the charges representing information are held in the floating gate. When the charges representing information in the floating gate should be erased, the whole EPROM is cooled, and the charges are discharged through the superconductive material and the control gate. By the use of a superconducting material in this fashion, other structures enabling erasure such as UV-radiation windows and tunnel oxide films may be omitted without increasing the chip area of the non-volatile memory.

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"New Superconductor Containing Copper Oxides"; disclosed anonymously, Research Disclosure, Apr. 1989, No. 30, Kenneth Mason Publications, England.

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