Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

2008-07-08

2008-07-08

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257SE27103, C438S254000

Reexamination Certificate

active

10488377

ABSTRACT:
A non-volatile semiconductor memory comprising at least one EPROM/EEPROM memory cell that includes a floating gate transistor and a coupling capacitor, said floating gate transistor comprising a field effect transistor and a polysilicon layer, the coupling capacitor comprising a first electrode and a second electrode as well as a dielectric interposed between said electrodes, the first electrode of the coupling capacitor being electrically coupled with the polysilicon layer of the floating gate transistor, and the control electrode of the floating gate transistor forming the second electrode of the coupling capacitor. The invention also relates to a display device and an arrangement for controlling a display device, which each comprise a non-volatile semiconductor memory.

REFERENCES:
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5981335 (1999-11-01), Chi
patent: 5998264 (1999-12-01), Wu
patent: 6784473 (2004-08-01), Sakai et al.
patent: 6965142 (2005-11-01), Diorio et al.
Patent abstracts of Japan. vol. 1996, No. 08, Aug. 30, 1996.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3953969