Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

2007-09-04

2007-09-04

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21662, C257SE21379

Reexamination Certificate

active

11152330

ABSTRACT:
A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which a channel is formed under the control of the gate electrode via the stacked-layer film, and two second conductivity type regions formed at the semiconductor substrate sandwiching the first conductivity type region therebetween, the memory transistor having a channel length L which is between channel lengths L1and L2. with the channel length L1being estimated as the boundary of occurrence of a short channel effect at the time of a write operation and the channel length L2the time of a read operation, with the channel length L1being different from the channel length L2.

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