Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

2006-05-16

2006-05-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S319000

Reexamination Certificate

active

07045854

ABSTRACT:
An object of the present invention is to provide a semiconductor memory device suitable for larger-capacity storage because of its ability to store 3 or more bits in one element and capable of a high-speed and high-efficiency write operation due to a reduced leakage current during the write operation and provide a fabrication method therefor. According to the present invention, each of elements has a source region, a drain region, a control gate, two charge storage regions, and one or more assist gates. During a write operation, source side injection writing is performed with respect to a write target element by using the assist gates, while adjacent elements are isolated by field isolation using the assist gates.

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