Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

1989-08-10

1991-07-23

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Erase

365185, 36523003, G11C 1602

Patent

active

050349260

ABSTRACT:
In a non-volatile semiconductor memory of this invention, a memory cell array constituted by a plurality of memory cells is divided into a plurlaity of blocks, and erase lines which are common to the respective blocks and independent from each other are arranged. In the data write mode, a predetermined voltage is applied to only the erase line connected to a selected one of the blocks.

REFERENCES:
patent: 4630087 (1986-12-01), Momodomi
Masuoka et al., "A 256-Kbit Flash E2PROM Using Triple-Polysilicon Technology", IEEE Journal of Solid-State Circuits, vol. SC-22, No. 4, pp. 548-552. Aug. 1987.

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