Non-volatile semiconductor information storage device

Details Non-volatile semiconductor information storage device Non-volatile semiconductor information storage device

1995-09-11

1998-01-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257321, H01L 29788

Patent

active

057082855

ABSTRACT:
A non-volatile semiconductor storage device with which a multi-value memory is realized and the amount of information storable is increased without increasing the number of memory transistors and the area occupied thereby. A gate electrode portion 20a of each memory transistor has a two-layer floating gate structure comprising two floating gate electrodes 22a, 22b and a control gate electrode 24 which are substantially vertically laminated one above another. The non-volatile semiconductor storage device is thereby constructed as a multi-value memory capable of providing a state "1" where electrons are injected into the first floating gate electrode 22a, a state "0" where electrons are injected into the first and second floating gate electrodes 22a, 22b, and a state "2" where electrons are withdrawn from the first and second floating gate electrodes 22a, 22b.

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patent: 5168465 (1992-12-01), Harari
patent: 5463235 (1995-10-01), Ishii
patent: 5517044 (1996-05-01), Koyama
patent: 5557566 (1996-09-01), Ochii
patent: 5559048 (1996-09-01), Inoue
patent: 5569946 (1996-10-01), Hong

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