Non-volatile semiconductor device with multi-layered capacitor i

Details Non-volatile semiconductor device with multi-layered capacitor i Non-volatile semiconductor device with multi-layered capacitor i

1996-09-10

1998-03-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257325, H01L 29792

Patent

active

057290350

ABSTRACT:
A structure and a manufacturing method of a semiconductor device which prevents leakage of electric charges from a floating gate electrode to outside. The semiconductor device includes a capacitor insulating film at an upper surface and opposing sidewall surfaces of the floating gate electrode, which film includes a first silicon nitride film, a first silicon oxide film, a second silicon nitride film and a second silicon oxide film stocked in this order from the bottom. In such a structure, the capacitor insulating film prevents electric charges accumulated in the floating gate electrode as information from leaking outside from the vicinity of its end portion A.

REFERENCES:
patent: 5252846 (1993-10-01), Tanaka et al.
patent: 5289026 (1994-02-01), Ong
patent: 5304829 (1994-04-01), Mari et al.
patent: 5379253 (1995-01-01), Bergemont
patent: 5475251 (1995-12-01), Kuo et al.
patent: 5554869 (1996-09-01), Chang

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