Non-volatile random access memory with ferroelectric capacitor

Details Non-volatile random access memory with ferroelectric capacitor Non-volatile random access memory with ferroelectric capacitor

1994-02-22

1995-05-16

Jackson, Jerome

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 257295, 257298, H01L 2711, H01L 29772, H01L 2992, G11C 1122

Patent

active

054167353

ABSTRACT:
Random access memory includes a pair of metal oxide semiconductor (MOS) transistors which are connected to each other by a common impurity diffusion region, and a capacitor which is formed of ferroelectric film acting as a capacitor layer and is connected to the impurity diffusion region, one of the pair of MOS transistors being connected to a bit line and a word line.

REFERENCES:
patent: 5075888 (1991-12-01), Yamauchi et al.
patent: 5121353 (1992-06-01), Natori
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5198994 (1993-03-01), Natori

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